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Si1058X
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
20
18.9
- 3.6
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.7
1.55
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 85 °C
V DS = ? 5 V, V GS = 4.5 V
6
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance
R DS(on)
g fs
V GS = 4.5 V, I D = 1.3 A
V GS = 2.5 V, I D = 1.1 A
V DS = 10 V, I D = 1.3 A
0.076
0.103
5.5
0.091
0.124
?
S
Dynamic
b
Input Capacitance
C iss
380
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 10 V, V GS = 0 V, f = 1 MHz
75
45
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 10 V, V GS = 5 V, I D = 1.3 A
V DS = 10 V, V GS = 4.5 V, I D = 1.3 A
3.9
3.51
0.82
5.9
5.3
nC
Gate-Drain Charge
Q gd
0.61
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 10 V, R L = 15 ?
I D ? 1 A, V GEN = 4.5 V, R g = 1 ?
4.3
8
20
13
6
5.6
12
30
18
9
?
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current a
I SM
6
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
V SD
t rr
Q rr
t a
I S = 1 A
I F = 1 A, dI/dt = 100 A/μs
0.8
10.4
3.7
6.5
1.2
16
5.7
V
nC
ns
Reverse Recovery Rise Time
t b
3.9
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73894
S12-1618-Rev. E, 09-Jul-12
For technical question, contact: pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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